Publikacje

2023

  1. Puźniak M., Gajewski W., Seweryn A., Klepka M.T., Witkowski B.S., Godlewski M., Mroczyński R. Studies of Electrical Parameters and Thermal Stability of HiPIMS Hafnium Oxynitride (HfOxNy) Thin Films, Materials 16 (2023) 2539, DOI: 3390/ma16062539, IF=3.748.
  2. Wiśniewski P., Mazurak A., Jasiński J., Beck R.B., Study of silicon-oxide RRAM devices based on complex impedance spectroscopy, Solid-State Electronics 208 (2023) 108732, DOI: 10.1016/j.sse.2023.108732, IF=1.916.
  3. Suszek J., Makowski M., Kołodziejczyk A., Włodarczyk F., Sobczyk A., Nurczyk P., Duda P., Starobrat J., Beck R.B., Extended depth of focus for high-end machine vision lenses by annular achromatic add-on diffractive elements, Optics and Lasers Engineering 162 (2023) 107445, DOI: 10.1016/j.optlaseng.2022.107445.
  4. Haras M., Robillard J.F., Skotnicki T., Dubois E., Design and fabrication of nanometer measurement platform for better understanding of silicon mechanical properties, Journal of Applied Physics (2023) 134(2) 024305; DOI: 10.1063/5.0152192.
  5. Dróżdż P.A., Haras M., Przewłoka A., Krajewska A., Filipiak M., Słowikowski M., Stonio B., Czerniak-Łosiewicz K., Mierczyk Z., Skotnicki T., Lioubchenko D., A graphene/h-BN MEMS varactor for sub-THz and THz applications, Nanoscale (2023) 15(31) 13133, DOI: 10.1039/D2NR06863J.
  6. Demchenko I.N., Nikiforow K., Chernyshova M., Melikhov Y., Syryanyy Y., Korsunska N., Khomenkova L., Brodnikovskyi Y., Brodnikovskyi D., X-ray Photoelectron Spectroscopy Analysis of Scandia-Ceria-Stabilized Zirconia Composites with Different Transport Properties, Materials (2023) 16(16) 5504, DOI: 10.3390/ma16165504.

 

2022

  1. Mroczyński R., Ożga M., Godlewski M., Witkowski B.W., Hydrothermally formed copper oxide (CuO) thin films for resistive switching memory devices, Solid-State Electronics 194 (2022), DOI: 10.1016/j.sse.2022.108357, IF=1.916.
  2. Wiśniewski P., Nieborek M., Mazurak A., Jasiński J., Investigation of the Temperature Effect on Electrical Characteristics of Al/SiO2/n++-Si RRAM Devices, Micromachines 13(10) (2022) 1641, DOI: 10.3390/mi13101641.
  3. Lelit M., Słowikowski M., Filipiak M., Juchniewicz M., Stonio B., Michalak B., Pavłov K., Myśliwiec M., Wiśniewski P., Kaźmierczak A., Anders K., Stopiński S., Beck R.B., Piramidowicz R., Passive Photonic Integrated Circuits Elements Fabricated on a Silicon Nitride Platform, Materials 1(4) (2022) 1398, DOI: 10.3390/ma15041398.

 

2021

  1. Wiśniewski P., Jasiński J., Mazurak A., Stonio B., Majkusiak B., Investigation of electrical properties of the al/sio2 /n++-si resistive switching structures by means of static, admittance, and impedance spectroscopy measurements, Materials 14(20) (2021) 6042, DOI: 10.3390/ma14206042.
  2. Seweryn, A., Lawniczak-Jablonska, K., Kuzmiuk, P., Godlewski, M., Mroczynski, R., Investigations of structural and electrical properties of ALD films formed with the ozone precursor, Materials 14(18) (2021) 5395, DOI: 10.3390/ma14185395, IF=3.748.
  3. Schiavon D., Mroczyński R., Kafar A., Kamler G., Levchenko I., Najda S., Perlin P., Refractive index of heavily germanium-doped gallium nitride measured by spectral reflectometry and ellipsometry, Materials 14(23) (2021), DOI: 10.3390/ma14237364, IF=3.748.
  4. Zdanowicz M., Mroczyński R., Szczepański P., Strong second-harmonic response from semiconductor–dielectric interfaces, Applied Optics 60(5) (2021), pp. 1132–1136, DOI: 10.1364/AO.414255, IF=1.905.
  5. Mazurak A., Majkusiak B., Investigation of the anomalous effect of the AC-signal frequency on flat-band voltage of Al/HfO2/SiO2/Si structures, Solid-State Electronics 183 (2021) 108107, DOI: 10.1016/j.sse.2021.108107.
  6. Starobrat J., Fiderkiewicz S., Kołodziejczyk A., Sypek M., Beck R.B., Pavłov P., Słowikowski M., Kowalczyk A., Suszek J., Makowski M., Suppression of spurious image duplicates in Fourier holograms by pixel apodization of a spatial light modulator, Optics Express 29(24) (2021) 40259 - 40273, DOI: 10.1364/OE.441489.
  7. Mroczyński R., Incorporation of silicon-carbide (SiC) nanocrystals in the MIM structures based on pulsed-DC reactively sputtered HfOx layers, IEEE Explore (2021), DOI: 10.1109/EuroSOI-ULIS53016.2021.9560175.

 

2020

  1. Mazurak A., Mroczyński R., Beke D., Gali A., Silicon-carbide (SiC) nanocrystal technology and characterization and its applications in memory structures, Nanomaterials 10(12) (2020) 2387, DOI: 10.3390/nano10122387, IF=5.719.
  2. Mroczyński R., Iwanicki D., Fetliński B., Ożga M., Świniarski M., Gertych A., Zdrojek M., Godlewski M., Optimization of Ultra-Thin Pulsed-DC Magnetron Sputtered Aluminum Films for the Technology of Hyperbolic Metamaterials, Crystals (2020) 10, 384, DOI: 10.3390/cryst10050384, IF=2.670.
  3. Puźniak M., Gajewski W., Żelechowski M., Jamroz J., Gertych A., Zdrojek M., Mroczyński R., Technology and optimization of hafnium oxynitride (HfOxNy) thin-films formed by pulsed-DC reactive magnetron sputtering for MIS devices, Microelectronic Engineering 228 (2020) 111332, DOI: 10.1016/j.mee.2020.111332, IF=2.662.